Auto Strain Mapping

Novel Automated Strain Mapping Solution for TEM/STEM (Patent pending) based on nanobeam precession diffraction patterrns in combination with DigiSTAR. Precision up 0.02% (200kV FEG) with spatial resolution up to 2nm attainable (FEG-TEM). Measurement of strain with high spatial resolution and high precision in semiconductor devices is critical to monitor the designed and unintended strain distributions.

Auto Strain Mapping Specification

  • High spatial resolution, high precision strain mapping in modern semiconductor devices.
  • Acquisition of STEM reference image.
  • Ultra -fast nanobeam precession electron diffraction scanned acquisition.
  • Typical acquisition time: 5-10 mm (150x150)
  • Time per pixel: 10-40 ms Analysis time 5-10 min.
  • Automated local strain analysis via AppFive proprietary algorithm.
  • Acquisition from individual positions, line profiles, areas Spatial resolution < 2 nm attainable (FED TEM)
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