PECVD System For Silicon Layer

This Cluster System for PECVD For Silicon Layer and it used for High density & a—Si:H and nc—Si:H layer.

Feature of PECVD For Silicon Layer

  • High density PECVD system for a—Si:H and nc—Si:H layer
  • Low temperature deposition of a—Si:H layer (under about 300°C)
  • Robot transporting system
  • Applications Optical devices Intensity (a.u.) Raman shift of a—Si:H layer using PECVD
  • Applications Optical waveguide Passivation layer
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