PECVD system TI-O1200-P80V10

Preparation of nano materials, Various CVD experiment,Thin film growth of SiNx and SiO2,Passivation of semiconductor devices and integrated circuits


 
Key Features

PECVD-system-Ti
Technical Specification

Product Name

PECVD system

Chamber Length

440mm

Product Model

TI-O1200-P80V10

Tube Diameter

80mm

Using Temperature

≦1100OC

Tube Length

1400mm

Temperature Accuracy

±1 OC

Total Power

5KW

Temperature Control

Intelligent PID

Power Supply

220V 50/60Hz

Pre-storing Curve

Multi curves

Plasma RF generator

500W